central semiconductor corp. tm process CP714 small signal transistor pnp - high current transistor chip princip al device types cbcp69 cbcx69 czt751 mps750 mps751 process epitaxial planar die size 40 x 40 mils die thickness 9.0 mils base bonding pad area 7.9 x 8.7 mils emitter bonding pad area 9.0 x 14 mils top side metalization al - 30,000? back side metalization au - 18,000? process details 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com backside collector geometry r2 (1-august 2002) gross die per 4 inch w afer 7,070
central semiconductor corp. tm process CP714 typical electrical characteristics 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r2 (1-august 2002)
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